Material Characterization services
Materials Science services
We understand that time is of the essence. Our experts in nano micro materials testing methods combined with access to specialized tools at material characterization services lab in Bangalore, India are ready to help with your anomalies.
List of Instruments
- X-ray Diffraction and Fluorescence
- Scanning Electron Microscopy
- Atomic Force Microscopy
- X-Ray Photoemission Spectroscopy
- Auger Electron Spectroscopy
- Secondary Ion Mass Spectroscopy
- Fourier Infrared spectroscopy
- UV-Vis Spectroscopy
- Nuclear Magnetic Resonance
- Raman Spectroscopy
- Reflectometry and Ellipsometry
- Transmission Electron Microscopy
- Focused Ion Beam
- Laser Doppler Vibrometer
- Nano Indenter
- Particle Size Analyzer
- Contact Angle Measurements
- Thermogravimetric Analysis
Scanning Electron Microscope
X-Ray Photoelectron Spectroscopy
Transmission Electron Microscope
SEM Ideal Application :
- Failure Analysis and Reverse engineering.
- Grain Size, Sample cross section, Surface morphology and Defect studies.
- Elemental microanalysis and particle with EDAX characterization.
- Resolution : 1 nM @15 Kv
- Attachment 1 : EDS Detector for Material Compositional Analysis EDAX.
- Attachment 2 : CL Detector for Cathodoluminescence.
- Coater : Au Coater for Non Metallic and Non Conducting samples.
Transmission Electron Microscope
X-Ray Photoelectron Spectroscopy
Transmission Electron Microscope
TEM Ideal Application :
- Surface and interface Topography and Morphology.
- SAED compositional and crystalline information.
- Crystal defect and nanometer scale and elemental maps characterization.
- Material Science studies of dislocations, grain boundaries, voids, stacking faults.
- Sample Preparation : Reactive Ion Milling and Sample holder grids.
- Tool Resolution : 0.8 nm at 30 kV (STEM), 0.9 nm at 15 kV, 1.4 nm at 1 kV.
- Sample Size : 150 mm diameter with full rotation max clearance of 55 mm.
- Sample Resolution : 1nm
X-Ray Photoelectron Spectroscopy
X-Ray Photoelectron Spectroscopy
Focused Ion Beam
XPS Ideal Application :
- Surface analysis of organic and inorganic materials, stains or residues.
- Chemical Mapping and Identification of all elements except for H and He on surface and Thin films.
- Determining composition and chemical state and binding information from surfaces.
- Depth profiling for thin film composition.
- Thin film oxide and nitride thickness measurements.
- Spot Size : 15 Micron.
- Depth Resolution : 20 to 200A in Profiling Mode and 10 to 100 A in Surface analysis mode.
- Detection Limits: 0.01 – 1 at % sub monolayer.
Focused Ion Beam
Focused Ion Beam
Focused Ion Beam
FIB Ideal Application :
- APEX cuts, Micro Manipulator cross section.
- Device reverse engineering & tomography.
- Ion Beam, E-Beam Pt,W & Carbon deposition and Ion Beam Milling.
- Landing Voltage : E-beam 350 V to 30 kV I-beam 500 V to 30 kV.
- Resolution : 0.8 nm at 30 kV (STEM), 0.9 nm at 15 kV, 1.4 nm at 1 kV.
- Sample Size : 150 mm diameter with full rotation max clearance of 55 mm.
Secondary Ion Mass Spectroscopy
Focused Ion Beam
Secondary Ion Mass Spectroscopy
SIMS Ideal Application :
- Surface microanalysis of organic and inorganic materials.
- Ion imaging of thin film surfaces and interfaces.
- Depth profiling survey.
- Specific molecular information on thin (sub-monolayer) organic films/contaminants.
- Detection Limits: 107 – 1010 at/cm2; sub-monolayer.
- Depth Resolution: 1-3 monolayers (Static mode)
Auger Electron Spectroscopy
Focused Ion Beam
Secondary Ion Mass Spectroscopy
AES Ideal Application :
- Defect and particle analysis
- Surface chemical analysis
- Small-area depth profiling
- Thin film analysis and material composition.
- Metallurgical analysis.
- Detection Limits: 0.1 to 1 at % sub-monolayer.
- Depth Resolution: 20 to 200Ǻ in depth profiling mode.
- Lateral Resolution : 70 A.
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Chemical Material Analysis
Our chemical test analytical lab staff in Bangalore, India are ready to help you determine the root cause, so that the solutions can be developed quickly, preventing further failures and reducing downtime racing your goals.
X-Ray Diffraction and Fluorescence
Ultra Violet Spectroscopy
X-Ray Diffraction and Fluorescence
XRD XRF Ideal Application :
- Determining quantitative phase composition, Lattice parameters, Alloy composition.
- Identification and quantification of crystalline phase, Doping concentration, Grain residual strain.
- Investigation of Crystal structure, Texture orientation, Rocking curve and X-ray reflectivity measurements.
- X-Ray Source : Cu K-alpha 0.1541 nM.
- Power : 1.2 KW
- Voltage : - 40 KV
Fourrier and IR Spectroscopy
Ultra Violet Spectroscopy
X-Ray Diffraction and Fluorescence
FTIR Ideal Application :
- Nano characterization and identification of complex mixtures of materials, gases, thick films, liquids and solid polymer and polymer blends.
- Surface analysis for analysis of adhesives, coatings and polymer adhesions.
- Particle Chemical analysis, stains and surface blemishes.
- Detector : LiTaO3
- Wavelength Range : 400 to 7800 cm -1
- Mode : Transmission and Reflection.
- Temperature Range : 5 C to 45 C.
Ultra Violet Spectroscopy
Ultra Violet Spectroscopy
Ultra Violet Spectroscopy
UV-VIS Ideal Application :
- Absorption, transmission studies and investigation for solid and thin films.
- Optical Investigation properties of liquids and solids between 200 nm and 3300 nm.
- Quantification and quality assurance in determination of analytes in liquid solutions.
- Wavelength Range : 200 to 3200 nm.
- Reflectance : UV to NIR
- Temperature Range : 5 C to 45 C.
- Sample size : 0.5×0.5 cm to 10×10 cm for solid samples.
- Sample volume : > 0.2 mL for liquid samples.
Nuclear Magnetic Resonance
Raman Photoluminescence Spectroscopy
Ultra Violet Spectroscopy
NMR Ideal Application :
- Chemical structure, composition identification and analysis.
- Identification of sample purity and raw materials fingerprinting.
- Determination of end group in polymer, Reaction kinetics and mechanism examination.
- Quantitative compositional information on mixtures.
- Signal : Radio frequency.
- Working Temperature : -80°C to 150°C.
Raman Photoluminescence Spectroscopy
Raman Photoluminescence Spectroscopy
Raman Photoluminescence Spectroscopy
Ideal Application :
- Chemical fingerprinting on polymer and glass.
- Crystallographic orientation and Chemical bonds.
- Vibrational frequencies analysis of SiO, Si2O2 and Si3O3. Spatial and spectral resolution mapping.
- Detector Type : NIR GaAS Detector.
- Wavelength : 800 to 1600 nm.
- Laser Range : 266, 532, 785 nm.
- Temperature : Down 7 K.
Zeta Potential
Raman Photoluminescence Spectroscopy
Raman Photoluminescence Spectroscopy
Ideal Application :
- Determination of stability in colloidal dispersions.
- Quantitative analysis of Electrophoretic mobility and dynamic mobility.
- Chemical fingerprinting on polymer and glass.
- Detector Type : NIR GaAS Detector.
- Wavelength : to 1600 nm.
- Laser Range : 266, 785 nm.
- Temperature : Down 7 K.
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Nano solid state physics
We bring deep specialized talent in nano micro materials testing semiconductor optics, laser and device physics. We combine our knowledge and resources to help you find best solutions to stay a step ahead of the competition using our state of the art material characterization services lab.
Atomic Force Microscope
Hall Mobility, Carrier Density and Superconductors
Hall Mobility, Carrier Density and Superconductors
AFM Ideal Application :
- Surface Morphology
- Surface Roughness
- RMS,Step Height.
- Surface Potential
- Work function
- Young's modulus
- Electric and Magnetic surface domain mapping.
- Mode Type : Contact, Non-Contact, MFM, SCM and KPFM.
- Temperature Stage : -20 C to 250 C.
Hall Mobility, Carrier Density and Superconductors
Hall Mobility, Carrier Density and Superconductors
Hall Mobility, Carrier Density and Superconductors
Ideal Application :
- Hall Voltage,Carrier Concentration, Coefficient and Carrier mobility.
- 4 probe room and low temperature sheet resistance, Vacuum, Pulse IV, CV measurement.
- Low Temperature Liquid N2 and He Superconducting pulse measurement and analysis.
- Probe Bench : 5 Probes DC Supply.
- Probe Size :10 um to 3 um.
- Liquid N2 : 77 Kelvin to 400 Kelvin.
- Liquid He : 5 Kelvin to 500 Kelvin.
- Magnet : +/- 2.5 Tesla.
- Vacuum Pressure : 4.5 e-07 mBar.
Semiconductor Device Parameter Analyser
Hall Mobility, Carrier Density and Superconductors
Semiconductor Device Parameter Analyser
Ideal Application :
- Probe stations includes microscope/video system, vibration isolation table, probe card holders,.
- RF and SMU DC probes needles calibration software and standards.
- Measurements of IV, Id-Vd, Id-Vg, Break down, Carrier Recombination, Reliability life time, Pulsed Id-Vd.
- Determining Mobility and Threshold Voltage in CMOS, RF MMIC and Memory devices.
Optical and 3D Profilometer
Ellipsometry and Spectroscopic Measurements
Semiconductor Device Parameter Analyser
Ideal Application :
- Non contact Surface morphology.
- Step height and Surface roughness.
- Vertical Resolution : 5 nM
- Lateral Resolution : 0.4 to 0.6 uM
- X-Y Scan Area : X -Y 1.6 mm sq.
Laser Doppler Vibrometer
Ellipsometry and Spectroscopic Measurements
Ellipsometry and Spectroscopic Measurements
LDV Ideal Application :
- Static and Dynamic MEMS Measurements, Frequency domain resonance analysis.
- Time domain and Damping studies on 3D MEMS structures.
- Frequency Operation Range : 20MHz
- Resolution : 2 nM inplane.
Ellipsometry and Spectroscopic Measurements
Ellipsometry and Spectroscopic Measurements
Ellipsometry and Spectroscopic Measurements
Ideal Application :
- Spectroscopic Ellipsometry for thickness and optical properties ( n, K values) for single to multilayer thin films. Thickness 3D mapping and needed application.
- In line digital optical and dark field microscopes.
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80 ft Road, RMV 2 nd Stage, Bangalore 560094
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