Material Characterization Services

SEM Ideal Application : 

• Grain Size, Sample cross section, Surface morphology and Defect studies. 
• Failure Analysis and Reverse engineering. 
• SEM in depth details. 
• Elemental microanalysis and particle with EDAX characterization. 
• Resolution : 1 nM @15 Kv
• Attachment 1 : EDS Detector for Material Compositional Analysis EDAX.
• Attachment 2 : CL  Detector for Cathodoluminescence.  
• Coater : Au Coater for Non Metallic and Non Conducting samples.  

TEM Ideal Application : 

• Material Science studies of dislocations, grain boundaries, voids, stacking faults.  
• Surface and interface Topography and Morphology.
• SAED compositional and crystalline information.  
• Crystal defect at nanometer scale and elemental mapping characterization.
• TEM in depth details.
• Sample Preparation : Reactive Ion Milling and Sample holder grids.
• Tool Resolution : 0.8 nm at 30 kV (STEM), 0.9 nm at 15 kV, 1.4 nm at 1 kV. 

3D X-ray Ideal Application : 

• Non-destructive 3D visualization of internal structures, BGA solder joint analysis, void detection, and crack propagation studies. 
• Cross-sectional imaging without cutting the sample; real-time material characterization services.
  Resolution: Up to 1–2 µm voxel size depending on sample size and density.
  Attachment 1: High-precision Rotation Stage for full 360° tomography.
  Sample Types: Suitable for metals, polymers, ceramics, and electronic assemblies of varied thickness and geometry.

FIB Ideal Application : 

• APEX cuts, Micro Manipulator cross section. 
• Device reverse engineering & tomography. 
• FIB in depth details.
• Ion Beam, E-Beam Pt,W & Carbon deposition and Ion Beam Milling. 
• Landing Voltage : E-beam 350 V to 30 kV I-beam 500 V to 30 kV. 
• Resolution : 0.8 nm at 30 kV (STEM), 0.9 nm at 15 kV, 1.4 nm at 1 kV. 
• Sample Size : 150 mm diameter with full rotation max clearance of 55 mm.  

EDS-EDAX Ideal Application :

• Elemental composition analysis at micro to nanoscale, phase identification, and alloy verification. 
• Material failure analysis of contamination, inclusions, and intermetallics. 
• Point, line, and area scans for localized or mapped compositional profiling. 
• Quantitative analysis of metallic, ceramic, polymeric, and composite materials.   
• Detection Range: From Beryllium (Be) to Uranium (U) with semi-quantitative to quantitative outputs.
  

AFM Ideal Application :  

• High-resolution surface topography, roughness, and nanostructure mapping
• Mechanical property testing such as hardness, modulus, and adhesion at the nanoscale.  
• Phase imaging for material heterogeneity and domain structure analysis. 
• Nanoscale characterization of coatings, thin films, polymers, and biomaterials  
• Resolution: Lateral ~1 nm; Vertical ~0.1 nm
• Attachment : Conductive AFM mode for electrical property mapping

XRD Ideal Application :

• Determining quantitative phase composition, Lattice parameters, Alloy composition.
• Identification and quantification of crystalline phase, Doping concentration, Grain residual strain.
• Analysis of crystallite size, strain, and preferred orientation (texture) 
• Investigation of Crystal structure, Texture orientation, Rocking curve and X-ray reflectivity measurements. 
• X-Ray Source : Cu K-alpha 0.1541 nM.
• Power : 1.2 KW
• Voltage : - 40 KV

FTIR Ideal Application : 

• Nano characterization and identification of complex mixtures of materials, gases, thick films, liquids and solid polymer and polymer blends. 
• Surface analysis for analysis of adhesives, coatings and polymer adhesions.
• Particle Chemical analysis, stains and surface blemishes.  
• Detector :  LiTaO3 
• Wavelength Range :  400  to 7800 cm -1 
• Mode : Transmission and Reflection. 
• Temperature Range :  5 C to 45 C. 

UV-VIS Ideal Application :   

• Absorption, transmission studies and investigation for solid and thin films. 
• Optical Investigation properties of liquids and solids between 200 nm and 3300 nm. 
• Quantification and quality assurance in determination of analytes in liquid solutions.  
• Wavelength Range : 200  to 3200 nm. 
• Reflectance : UV to NIR 
• Temperature Range : 5 C to 45 C.
• Sample size : 0.5×0.5 cm to 10×10 cm for solid samples.
• Sample volume : > 0.2 mL for liquid samples.

NMR Ideal Application :  

• Chemical structure, composition identification and analysis. 
• Identification of sample purity and raw materials fingerprinting.
• Determination of end group in polymer, Reaction kinetics and mechanism examination. 
• Quantitative compositional information on mixtures.  
• Signal : Radio frequency. 
• Working Temperature : -80°C to 150°C. 

Ideal Application : 

• Chemical fingerprinting on polymer and glass. 
• Crystallographic orientation and Chemical bonds. 
• Vibrational frequencies analysis of SiO, Si2O2 and Si3O3. Spatial and spectral resolution mapping.   
• Detector Type : NIR GaAS Detector.
• Wavelength : 800 to 1600 nm. 
• Laser Range : 266, 532, 785 nm.
• Temperature : Down 7 K.

Ideal Application : 

• Determination of stability in colloidal dispersions. 
• Quantitative analysis of Electrophoretic mobility and dynamic mobility. 
• Chemical fingerprinting on polymer and glass.  
• Detector Type : NIR GaAS Detector.
• Wavelength :  to 1600 nm. 
• Laser Range : 266, 785 nm.
• Temperature : Down 7 K.

XRF Ideal Application :

• Elemental composition testing of solids, powders, films, and liquids.
• Bulk material identification and alloy grade verification
• Coating thickness measurement and layered structure analysis. 
• Resolution: Energy resolution ~150 eV 
• Attachment 1: Vacuum or helium purge chamber for light element detection
• Attachment 2: Automated sample changer for high-throughput analysis
• Sample Requirements: Flat, homogeneous samples; minimal surface contamination.

 Ideal Application :  

• Hall Voltage,Carrier Concentration, Coefficient and Carrier mobility.
• Hall bar fabrication.
• 4 probe room and low temperature sheet resistance, Vacuum, Pulse IV, CV measurement. 
• Low Temperature Liquid N2 and He Superconducting pulse measurement and analysis. 
• Probe Bench : 5 Probes DC Supply.
• Probe Size :10 um to 3 um. 
• Liquid N2 : 77 Kelvin to 400 Kelvin. 
• Liquid He : 5 Kelvin to 500 Kelvin. 
• Magnet : +/- 2.5 Tesla. 
• Vacuum Pressure : 4.5 e-07 mBar. 

 Ideal Application : 

• Probe stations includes microscope/video system, vibration isolation table, probe card holders.
• Semiconductor in depth details. 
• RF and SMU DC probes needles calibration software and standards. 
• Measurements of IV, Id-Vd, Id-Vg, Break down, Carrier Recombination, Reliability life time, Pulsed Id-Vd. 
• Determining Mobility and Threshold Voltage in CMOS, RF MMIC and Memory devices. 
• Functionality testing for detecting flaws in metal lines, voids and silicon nodules.

Profilometer Ideal Application :

• Non-contact 3D surface topography and roughness measurement.
• Thickness measurement of transparent and semi-transparent coatings.
• Step height, waviness, and surface defect analysis with high vertical resolution. 
• Suitable for optics, semiconductors, thin films, and precision-engineered surfaces
• Resolution: Vertical ~0.1 nm; Lateral depends on objective magnification. 
• Attachment 1: Software for 3D rendering, line profile, and surface statistics (Ra, Rq, etc.)
• Sample Requirements: Flat, reflective, or semi-reflective surfaces; no physical contact needed.

Infrared Ideal Application : 

• Non-contact surface temperature mapping and thermal gradient analysis.
• Detection of heat sources, thermal fatigue, and overheating in electronics and mechanical systems. 
• Real-time thermal behavior monitoring during component operation or testing.
• Useful for PCB diagnostics, LED heating, material emissivity analysis, and failure detection.
• Resolution: Thermal sensitivity ~0.02–0.1 °C; Spatial resolution varies by lens and sensor. 
• Attachment 1: Real-time thermal video capture and analysis software. 
• Sample Requirements: Components with emissive surfaces; minimal reflectivity preferred for accurate results.

Ideal Application : 

XPS Ideal Application : 

• Surface analysis of organic and inorganic materials, stains or residues.
• Chemical Mapping and  Identification of all elements except for H and He on surface and Thin films.  
• Determining composition and chemical state and binding  information from surfaces. 
• Depth profiling for thin film composition. 
• Thin film oxide and nitride thickness measurements. 
• Spot Size : 15 Micron.
• Depth Resolution : 20 to 200A in Profiling Mode and 10 to 100 A in Surface analysis mode. 
• Detection Limits: 0.01 – 1 at % sub monolayer.