Material Characterization Services

SEM Ideal Application : 

• Grain Size, Sample cross section, Surface morphology and Defect studies. 
• Failure Analysis and Reverse engineering. 
• SEM in depth details. 
• Elemental microanalysis and particle with EDAX characterization. 
• Resolution : 1 nM @15 Kv
• Attachment 1 : EDS Detector for Material Compositional Analysis EDAX.
• Attachment 2 : CL  Detector for Cathodoluminescence.  
• Coater : Au Coater for Non Metallic and Non Conducting samples.  

TEM Ideal Application : 

• Material Science studies of dislocations, grain boundaries, voids, stacking faults.  
• Surface and interface Topography and Morphology.
• SAED compositional and crystalline information.  
• Crystal defect at nanometer scale and elemental mapping characterization.
• TEM in depth details.
• Sample Preparation : Reactive Ion Milling and Sample holder grids.
• Tool Resolution : 0.8 nm at 30 kV (STEM), 0.9 nm at 15 kV, 1.4 nm at 1 kV. 

XPS Ideal Application : 

• Surface analysis of organic and inorganic materials, stains or residues.
• Chemical Mapping and  Identification of all elements except for H and He on surface and Thin films.  
• Determining composition and chemical state and binding  information from surfaces. 
• Depth profiling for thin film composition. 
• Thin film oxide and nitride thickness measurements. 
• Spot Size : 15 Micron.
• Depth Resolution : 20 to 200A in Profiling Mode and 10 to 100 A in Surface analysis mode. 
• Detection Limits: 0.01 – 1 at % sub monolayer. 

FIB Ideal Application : 

• APEX cuts, Micro Manipulator cross section. 
• Device reverse engineering & tomography. 
• FIB in depth details.
• Ion Beam, E-Beam Pt,W & Carbon deposition and Ion Beam Milling. 
• Landing Voltage : E-beam 350 V to 30 kV I-beam 500 V to 30 kV. 
• Resolution : 0.8 nm at 30 kV (STEM), 0.9 nm at 15 kV, 1.4 nm at 1 kV. 
• Sample Size : 150 mm diameter with full rotation max clearance of 55 mm.  

SIMS Ideal Application :

• Surface microanalysis of organic and inorganic materials.
• Ion imaging of thin film surfaces and interfaces. 
• Depth profiling survey.
• Specific molecular information on thin (sub-monolayer) organic films/contaminants.  
• Detection Limits: 107 – 1010 at/cm2; sub-monolayer.
• Depth Resolution: 1-3 monolayers (Static mode)  

AES Ideal Application :  

• Defect and particle analysis
• Surface chemical analysis
• Small-area depth profiling
• Thin film analysis and material composition.
• Metallurgical analysis.  
• Detection Limits: 0.1 to 1 at % sub-monolayer. 
• Depth Resolution: 20 to 200Ǻ  in depth profiling mode. 
• Lateral Resolution : 70 A. 

AFM Ideal Application :

• AFM in depth details.
• Surface Morphology.
• Surface Roughness. 
• RMS,Step Height. 
• Surface Potential.
• Work function measurements. 
• Young's modulus.  
• Roughness Average (Ra)
• Root Mean Square (RMS) Roughness measurement.
• Peak-to-Valley Height (Rz)
• Phase contrast measurements
• Electric and Magnetic surface domain mapping. 
• Mode Type : Contact, Non-Contact, MFM, SCM and KPFM.
• Temperature Stage : -20 C to 250 C. 

 Ideal Application :  

• Hall Voltage,Carrier Concentration, Coefficient and Carrier mobility.
• Hall bar fabrication.
• 4 probe room and low temperature sheet resistance, Vacuum, Pulse IV, CV measurement. 
• Low Temperature Liquid N2 and He Superconducting pulse measurement and analysis. 
• Probe Bench : 5 Probes DC Supply.
• Probe Size :10 um to 3 um. 
• Liquid N2 : 77 Kelvin to 400 Kelvin. 
• Liquid He : 5 Kelvin to 500 Kelvin. 
• Magnet : +/- 2.5 Tesla. 
• Vacuum Pressure : 4.5 e-07 mBar. 

 Ideal Application : 

• Probe stations includes microscope/video system, vibration isolation table, probe card holders.
• Semiconductor in depth details. 
• RF and SMU DC probes needles calibration software and standards. 
• Measurements of IV, Id-Vd, Id-Vg, Break down, Carrier Recombination, Reliability life time, Pulsed Id-Vd. 
• Determining Mobility and Threshold Voltage in CMOS, RF MMIC and Memory devices.

Ideal Application :

•  Non contact Surface morphology.
• Step height and Surface roughness. 
• Vertical Resolution : 5 nM
• Lateral Resolution : 0.4 to 0.6 uM
• X-Y Scan Area : X -Y 1.6 mm sq. 

 LDV Ideal Application : 

• Static and Dynamic MEMS Measurements, Frequency domain resonance analysis.
• Time domain and Damping studies on 3D MEMS structures. 
• Frequency Operation Range : 20MHz
• Resolution : 2 nM inplane.

Ideal Application : 

• Spectroscopic Ellipsometry for thickness and optical properties ( n, K values) for single to multilayer thin films. Thickness 3D mapping and needed application. 
• In line digital optical and dark field microscopes.